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| MITSUBISHI Nch POWER MOSFET FS3UM-9 HIGH-SPEED SWITCHING USE FS3UM-9 OUTLINE DRAWING 10.5MAX. r 3.2 7.0 Dimensions in mm 4.5 1.3 16 3.6 3.8MAX. 1.0 12.5MIN. 0.8 2.54 2.54 4.5MAX. 0.5 2.6 qwe wr q GATE w DRAIN e SOURCE r DRAIN e q VDSS ................................................................................ 450V rDS (ON) (MAX) ................................................................. 3.5 ID ............................................................................................ 3A TO-220 APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM PD Tch Tstg -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V Conditions Ratings 450 30 3 9 60 -55 ~ +150 -55 ~ +150 2.0 Unit V V A A W C C g Feb.1999 Typical value MITSUBISHI Nch POWER MOSFET FS3UM-9 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25C) Test conditions ID = 1mA, VGS = 0V IG = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 450V, VGS = 0V ID = 1mA, VDS = 10V ID = 1A, VGS = 10V ID = 1A, VGS = 10V ID = 1A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 450 30 -- -- 2 -- -- 1.0 -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3 2.7 2.7 1.5 300 35 6 13 10 30 30 1.5 -- Max. -- -- 10 1 4 3.5 3.5 -- -- -- -- -- -- -- -- 2.0 2.08 Unit V V A mA V V S pF pF pF ns ns ns ns V C/W Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance VDD = 200V, ID = 1A, VGS = 10V, RGEN = RGS = 50 IS = 1A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 100 POWER DISSIPATION PD (W) MAXIMUM SAFE OPERATING AREA 101 7 5 3 2 100 7 5 3 2 7 5 3 2 1ms 10ms DC TC = 25C Single Pulse tw=10s 100s 80 60 40 DRAIN CURRENT ID (A) 10-1 20 0 0 50 100 150 200 10-2 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) 10 PD = 60W DRAIN CURRENT ID (A) 8 TC = 25C Pulse Test DRAIN CURRENT ID (A) 4 5 TC = 25C Pulse Test PD=60W VGS=20V 10V 8V 6 VGS=20V 10V 8V 6V 2 5V 0 0 10 20 30 40 50 3 6V 2 4 1 5V 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS3UM-9 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 10 TC=25C Pulse Test 8 TC=25C Pulse Test 32 VGS=10V 20V 24 ID=4A 16 3A 8 2A 1A 0 0 4 8 12 16 20 6 4 2 0 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 10 TC=25C VDS=50V Pulse Test 101 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) VDS=10V Pulse Test DRAIN CURRENT ID (A) 8 6 3 2 100 7 5 3 2 10-1 -1 10 23 5 7 100 TC=25C 4 125C 75C 2 0 0 4 8 12 16 20 23 5 7 101 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 7 5 SWITCHING TIME (ns) SWITCHING CHARACTERISTICS (TYPICAL) 5 Ciss 3 2 tf 102 7 5 3 2 101 7 5 10-1 Tch = 25C VDD = 200V VGS = 10V RGEN = RGS = 50 CAPACITANCE Ciss, Coss, Crss (pF) 3 2 102 7 5 3 2 101 Coss td(off) 7 Crss 5 Tch=25C f=1MHz 3 VGS=0V 2 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) td(on) tr 23 5 7 100 23 5 7 101 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS3UM-9 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 20 GATE-SOURCE VOLTAGE VGS (V) SOURCE CURRENT IS (A) Tch = 25C ID = 3A 16 VDS = 100V 10 SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) TC=125C 25C 75C 6 VGS = 0V Pulse Test 8 12 200V 400V 8 4 4 2 0 0 4 8 12 16 20 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 3 2 100 7 5 3 2 10-1 -50 0 50 100 150 5.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) VGS = 10V ID = 1/2ID Pulse Test THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (25C) DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 D=1 2 0.5 100 7 0.2 5 3 2 10-1 7 5 3 2 0.1 1.0 0.8 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 0.6 0.4 -50 0 50 100 150 10-2 10-4 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999 CHANNEL TEMPERATURE Tch (C) |
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